It is showed that after doping s the bn thin films of n - type conductivity are obtained 研究表明,未摻雜的氮化硼薄膜電阻率為為1
2 for the first time , rf sputtering method and vapor doping method have been combined to prepare n type bn films . bn films doped with s are n type conductivity 摻s后的氮化硼薄膜表現(xiàn)出n型導(dǎo)電,未摻雜的氮化硼薄膜的電阻率1 . 8 1011 cm ,摻雜后的氮化硼薄膜的電阻率為7 . 3 107 cm 。
Bn films doped with s are n type conductivity . undoped bn films exhibit a resistivity of 1 . 8 1011 cm and those of doped are 2 . 13 105 cm , decreased by six order of magnitude . s fountain temperature and substrate temperature impact the resistivity evidently S源加熱溫度對氮化硼薄膜的電阻率有直接影響,表現(xiàn)在隨著s源加熱溫度的升高,氮化硼薄膜的電阻率下降的趨勢加快。